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The Insulated Gate Bipolar Transistor (IGBT) : Theory and Design

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Semiconductor devices, patticularly the insulated gate bipolar transistor (IGBT), from the heart of the power electronics industry and play a pivotal role in the regulation and distribution of energy in the world. Since its conception as a switching device, improvements and innovative design ideas have established IGBT as a rugged contender in the competitive electronics field.
Insulated Gate Bipolar Transistor (IGBT) : Theory and Design cover basic theory and design aspects of IGBTs, including the selection of silicon, achieving targeted specifications through device and process design, and device packaging. After laying the groundwork in MOS and bipolar disciplines, the author constructs the foundation of power device physycs necessary for clearly understanding the subject matter, including chapters

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Ketersediaan

Informasi Detail

Judul Seri

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No. Panggil

621.381 KHA t

Penerbit

Canada : Wiley & IEEE press., 2003

Deskripsi Fisik

xix, 627 hal; ill..; 18,5 x 25,5 cm

Bahasa

English

ISBN/ISSN

978-0-471-23845-4

Klasifikasi

621.381

Tipe Isi

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Tipe Media

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Tipe Pembawa

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Edisi

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Subjek

Bipolar Transistor

Info Detail Spesifik

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Pernyataan Tanggungjawab

Vinod Kumar Khanna

Versi lain/terkait

Lampiran Berkas

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